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Samsung applies EUV to 14nm DDR5 DRAM manufacturing

Samsung mentioned on Tuesday it has begun mass manufacturing of 14nm DRAM, with excessive ultra-violet (EUV) lithography utilized throughout its manufacturing.

The South Korean tech big mentioned it utilized EUV to 5 layers of the DDR5 DRAM. This elevated productiveness per wafer by 20% in comparison with the earlier technology, Samsung mentioned. Energy consumption per chip additionally improved roughly 20% in comparison with the prior iteration, it added.

Samsung mentioned it might proceed to use EUV to extra layers of DRAM 14nm and beneath to keep up its management within the reminiscence chip market.

The South Korean tech big, which is the world’s largest reminiscence chipmaker, applied EUV to its DRAM production for the first time again in March 2020.

In March this yr, it additionally launched its first DDR5 DRAM module with 512GB capability that was made with eight layers of 16Gb chips.

For the newest 14nm DDR5 DRAM, Samsung mentioned it might supply modules utilizing 24Gb chips.

On the identical time, Samsung’s cell enterprise launched a brief video in a blog post on the way it exams the Galaxy Z Fold Three and Galaxy Z Flip 3. The clip reveals the corporate’s numerous exams on the units, which embrace an environmental chamber the place the telephones’ numerous options are turned on whereas going via completely different temperatures and climates.

Within the video, the units are additionally proven to be dunked in water, and folded and unfolded utilizing equipment. For the Fold 3, different machines are used to attract strains on the gadget’s display screen utilizing the S Pen to make sure the function is working.



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